PhD student in Deep study and optimization acceleration of 2D h-BN epitaxy and its high-quality layered heterostructures using artificial intelligence

The PhD research will be conducted at the GEORGIATECH-CNRS joint laboratory, aiming to improve the quality of GaN-based materials grown on h-BN. The project involves advanced materials characterization and AI-assisted optimization of epitaxial growth parameters. The candidate will engage in developing MOVPE processes, investigating growth influences, and optimizing devices, contributing to the advancement of next-generation optoelectronic technologies.