Postdoctoral Research Associate: GaN Device Characterization and Modeling

The University of Texas at Dallas

Posted: 4 November 2026 - Dallas, United States of America

About this opening

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The University of Texas at Dallas is looking for a motivated Postdoctoral Research Associate to join the High Power Density Electronics Center. The role involves research on GaN power devices, collaborating with industry partners to evaluate and model device performance. Candidates should have a Ph.D. and experience in semiconductor device characterization and modeling.

Position details

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  • Reference: S07337P
  • Role: postdoctoral researcher
  • Employment type: full time
  • Research field: Engineering
  • Research topic: GaN power devices
  • Start date: 1 December 2026