Centre National de la Recherche Scientifique
Posted: 27 October 2026 - Palaiseau, France
We are seeking a postdoctoral researcher to develop field-effect transistors that combine a KTaO3-based two-dimensional electron gas with a HfZrO2 ferroelectric gate. The project aims to control the electronic properties of the 2DEG through ferroelectric polarization. The successful candidate will work on thin-film growth, characterization, and microfabrication, and will collaborate with researchers at Laboratoire Albert Fert.